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Electrical and Reliability Characteristics of High-K HoTiO3 α-InGaZnO Thin-Film Transistors

Identifieur interne : 000145 ( Main/Repository ); précédent : 000144; suivant : 000146

Electrical and Reliability Characteristics of High-K HoTiO3 α-InGaZnO Thin-Film Transistors

Auteurs : RBID : Pascal:14-0051115

Descripteurs français

Pascal (Inist)
- Caractéristique électrique, Fiabilité, Transistor couche mince, Matériau amorphe, Basse tension, Seuil tension, Effet champ intense, Courant intense, Surface lisse, Rugosité, Lacune, Contrainte électrique, Diélectrique permittivité élevée, Oxyde d'indium, Oxyde de gallium, Oxyde de zinc, Oxyde de titane, Oxygène.
Wicri :
- concept : Matériau amorphe, Oxygène.

English descriptors

KwdEn :
- Amorphous material, Electric stress, Electrical characteristic, Gallium oxide, High field effects, High k dielectric, High strength current, Indium oxide, Low voltage, Oxygen, Reliability, Roughness, Smooth surface, Thin film transistor, Titanium oxide, Vacancy, Voltage threshold, Zinc oxide.

Abstract

In this letter, we investigated the electrical and reliability characteristics of high-K HoTiO₃ amorphous indium-gallium-zinc oxide (α-IGZO) thin-film transistor (TFT) devices. The α-IGZO TFT device incorporating an HoTiO₃ dielectric exhibited excellent electrical characteristics in terms of a low threshold voltage of 0.12 V, a high field-effect mobility of 21.4 cm2/Vs, a small subthreshold swing of 160 mV/decade, and a high I_ON/I_OFF current ratio of 1.3 × 10⁸. These results are attributed to the incorporation of TiO_x into the Ho₂O₃ film forming the smooth surface roughness and thus reducing the oxygen vacancies. Furthermore, the threshold voltage stability of HoTiO₃ α-IGZO TFT was studied under both positive and negative bias stress conditions.

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Pascal:14-0051115

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Electrical and Reliability Characteristics of High-K HoTiO<sub>3</sub>
 α-InGaZnO Thin-Film Transistors</title>
<author><name sortKey="Pan, Tung Ming" uniqKey="Pan T">Tung-Ming Pan</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electronics Engineering, Chang Gung University</s1>
<s2>Taoyuan 333</s2>
<s3>TWN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Taïwan</country>
<wicri:noRegion>Taoyuan 333</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Chen, Ching Hung" uniqKey="Chen C">Ching-Hung Chen</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electronics Engineering, Chang Gung University</s1>
<s2>Taoyuan 333</s2>
<s3>TWN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Taïwan</country>
<wicri:noRegion>Taoyuan 333</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Liu, Jiang Hung" uniqKey="Liu J">Jiang-Hung Liu</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electronics Engineering, Chang Gung University</s1>
<s2>Taoyuan 333</s2>
<s3>TWN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Taïwan</country>
<wicri:noRegion>Taoyuan 333</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Her, Jim Long" uniqKey="Her J">Jim-Long Her</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Division of Natural Science, Center for General Education, Chang Gung University</s1>
<s2>Taoyuan 333</s2>
<s3>TWN</s3>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Taïwan</country>
<wicri:noRegion>Taoyuan 333</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Koyama, Keiichi" uniqKey="Koyama K">Keiichi Koyama</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Graduate School of Science and Engineering, Kagoshima University</s1>
<s2>Kagoshima 890-0065</s2>
<s3>JPN</s3>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Japon</country>
<wicri:noRegion>Kagoshima 890-0065</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">14-0051115</idno>
<date when="2014">2014</date>
<idno type="stanalyst">PASCAL 14-0051115 INIST</idno>
<idno type="RBID">Pascal:14-0051115</idno>
<idno type="wicri:Area/Main/Corpus">000153</idno>
<idno type="wicri:Area/Main/Repository">000145</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0741-3106</idno>
<title level="j" type="abbreviated">IEEE electron device lett.</title>
<title level="j" type="main">IEEE electron device letters</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Amorphous material</term>
<term>Electric stress</term>
<term>Electrical characteristic</term>
<term>Gallium oxide</term>
<term>High field effects</term>
<term>High k dielectric</term>
<term>High strength current</term>
<term>Indium oxide</term>
<term>Low voltage</term>
<term>Oxygen</term>
<term>Reliability</term>
<term>Roughness</term>
<term>Smooth surface</term>
<term>Thin film transistor</term>
<term>Titanium oxide</term>
<term>Vacancy</term>
<term>Voltage threshold</term>
<term>Zinc oxide</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Caractéristique électrique</term>
<term>Fiabilité</term>
<term>Transistor couche mince</term>
<term>Matériau amorphe</term>
<term>Basse tension</term>
<term>Seuil tension</term>
<term>Effet champ intense</term>
<term>Courant intense</term>
<term>Surface lisse</term>
<term>Rugosité</term>
<term>Lacune</term>
<term>Contrainte électrique</term>
<term>Diélectrique permittivité élevée</term>
<term>Oxyde d'indium</term>
<term>Oxyde de gallium</term>
<term>Oxyde de zinc</term>
<term>Oxyde de titane</term>
<term>Oxygène</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Matériau amorphe</term>
<term>Oxygène</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">In this letter, we investigated the electrical and reliability characteristics of high-K HoTiO<sub>3</sub>
 amorphous indium-gallium-zinc oxide (α-IGZO) thin-film transistor (TFT) devices. The α-IGZO TFT device incorporating an HoTiO<sub>3</sub>
 dielectric exhibited excellent electrical characteristics in terms of a low threshold voltage of 0.12 V, a high field-effect mobility of 21.4 cm2/Vs, a small subthreshold swing of 160 mV/decade, and a high I<sub>ON</sub>
/I<sub>OFF</sub>
 current ratio of 1.3 × 10<sup>8</sup>
. These results are attributed to the incorporation of TiO<sub>x</sub>
 into the Ho<sub>2</sub>
O<sub>3</sub>
 film forming the smooth surface roughness and thus reducing the oxygen vacancies. Furthermore, the threshold voltage stability of HoTiO<sub>3</sub>
 α-IGZO TFT was studied under both positive and negative bias stress conditions.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0741-3106</s0>
</fA01>
<fA02 i1="01"><s0>EDLEDZ</s0>
</fA02>
<fA03 i2="1"><s0>IEEE electron device lett.</s0>
</fA03>
<fA05><s2>35</s2>
</fA05>
<fA06><s2>1</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Electrical and Reliability Characteristics of High-K HoTiO<sub>3</sub>
 α-InGaZnO Thin-Film Transistors</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>PAN (Tung-Ming)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>CHEN (Ching-Hung)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>LIU (Jiang-Hung)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>HER (Jim-Long)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>KOYAMA (Keiichi)</s1>
</fA11>
<fA14 i1="01"><s1>Department of Electronics Engineering, Chang Gung University</s1>
<s2>Taoyuan 333</s2>
<s3>TWN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Division of Natural Science, Center for General Education, Chang Gung University</s1>
<s2>Taoyuan 333</s2>
<s3>TWN</s3>
<sZ>4 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Graduate School of Science and Engineering, Kagoshima University</s1>
<s2>Kagoshima 890-0065</s2>
<s3>JPN</s3>
<sZ>5 aut.</sZ>
</fA14>
<fA20><s1>66-68</s1>
</fA20>
<fA21><s1>2014</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>222V</s2>
<s5>354000501676680220</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2014 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>20 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>14-0051115</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>IEEE electron device letters</s0>
</fA64>
<fA66 i1="01"><s0>USA</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>In this letter, we investigated the electrical and reliability characteristics of high-K HoTiO<sub>3</sub>
 amorphous indium-gallium-zinc oxide (α-IGZO) thin-film transistor (TFT) devices. The α-IGZO TFT device incorporating an HoTiO<sub>3</sub>
 dielectric exhibited excellent electrical characteristics in terms of a low threshold voltage of 0.12 V, a high field-effect mobility of 21.4 cm2/Vs, a small subthreshold swing of 160 mV/decade, and a high I<sub>ON</sub>
/I<sub>OFF</sub>
 current ratio of 1.3 × 10<sup>8</sup>
. These results are attributed to the incorporation of TiO<sub>x</sub>
 into the Ho<sub>2</sub>
O<sub>3</sub>
 film forming the smooth surface roughness and thus reducing the oxygen vacancies. Furthermore, the threshold voltage stability of HoTiO<sub>3</sub>
 α-IGZO TFT was studied under both positive and negative bias stress conditions.</s0>
</fC01>
<fC02 i1="01" i2="X"><s0>001D03F04</s0>
</fC02>
<fC03 i1="01" i2="X" l="FRE"><s0>Caractéristique électrique</s0>
<s5>01</s5>
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<fC03 i1="01" i2="X" l="ENG"><s0>Electrical characteristic</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="SPA"><s0>Característica eléctrica</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="X" l="FRE"><s0>Fiabilité</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="ENG"><s0>Reliability</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="SPA"><s0>Fiabilidad</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE"><s0>Transistor couche mince</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Thin film transistor</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Transistor capa delgada</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="X" l="FRE"><s0>Matériau amorphe</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>Amorphous material</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Material amorfo</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Basse tension</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Low voltage</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Baja tensión</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE"><s0>Seuil tension</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="ENG"><s0>Voltage threshold</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA"><s0>Umbral tensión</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Effet champ intense</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>High field effects</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Courant intense</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>High strength current</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Corriente intensa</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="X" l="FRE"><s0>Surface lisse</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="ENG"><s0>Smooth surface</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA"><s0>Superficie lisa</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Rugosité</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>Roughness</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Rugosidad</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Lacune</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>Vacancy</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Cavidad</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Contrainte électrique</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Electric stress</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Tensión eléctrica</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="X" l="FRE"><s0>Diélectrique permittivité élevée</s0>
<s5>22</s5>
</fC03>
<fC03 i1="13" i2="X" l="ENG"><s0>High k dielectric</s0>
<s5>22</s5>
</fC03>
<fC03 i1="13" i2="X" l="SPA"><s0>Dieléctrico alta constante dieléctrica</s0>
<s5>22</s5>
</fC03>
<fC03 i1="14" i2="X" l="FRE"><s0>Oxyde d'indium</s0>
<s5>23</s5>
</fC03>
<fC03 i1="14" i2="X" l="ENG"><s0>Indium oxide</s0>
<s5>23</s5>
</fC03>
<fC03 i1="14" i2="X" l="SPA"><s0>Indio óxido</s0>
<s5>23</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE"><s0>Oxyde de gallium</s0>
<s5>24</s5>
</fC03>
<fC03 i1="15" i2="X" l="ENG"><s0>Gallium oxide</s0>
<s5>24</s5>
</fC03>
<fC03 i1="15" i2="X" l="SPA"><s0>Galio óxido</s0>
<s5>24</s5>
</fC03>
<fC03 i1="16" i2="X" l="FRE"><s0>Oxyde de zinc</s0>
<s5>25</s5>
</fC03>
<fC03 i1="16" i2="X" l="ENG"><s0>Zinc oxide</s0>
<s5>25</s5>
</fC03>
<fC03 i1="16" i2="X" l="SPA"><s0>Zinc óxido</s0>
<s5>25</s5>
</fC03>
<fC03 i1="17" i2="X" l="FRE"><s0>Oxyde de titane</s0>
<s5>26</s5>
</fC03>
<fC03 i1="17" i2="X" l="ENG"><s0>Titanium oxide</s0>
<s5>26</s5>
</fC03>
<fC03 i1="17" i2="X" l="SPA"><s0>Titanio óxido</s0>
<s5>26</s5>
</fC03>
<fC03 i1="18" i2="X" l="FRE"><s0>Oxygène</s0>
<s2>NC</s2>
<s2>FX</s2>
<s5>27</s5>
</fC03>
<fC03 i1="18" i2="X" l="ENG"><s0>Oxygen</s0>
<s2>NC</s2>
<s2>FX</s2>
<s5>27</s5>
</fC03>
<fC03 i1="18" i2="X" l="SPA"><s0>Oxígeno</s0>
<s2>NC</s2>
<s2>FX</s2>
<s5>27</s5>
</fC03>
<fN21><s1>062</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

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Electrical and Reliability Characteristics of High-K HoTiO3 α-InGaZnO Thin-Film Transistors

Electrical and Reliability Characteristics of High-K HoTiO3 α-InGaZnO Thin-Film Transistors

Descripteurs français

English descriptors

Abstract

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Links to Exploration step

Le document en format XML

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